姓名: Professor Mike Jennings
职务: 功率半导体器件课程负责人
网页: Professor Mike Jennings - Swansea University
简介:
专注于研究节能应用的宽带隙电子材料（碳化硅、氧化镓和氮化镓）。自2003年以来，他一直在碳化硅电力电子和器件领域工作，主要兴趣是通过广泛的工业合作伙伴网络研究该技术的可制造性。最近，他在用于电力电子应用的超宽带隙氧化镓领域中承担许多研究项目。旨在从商业化（产品）的角度探讨这种新材料的可行性。
教育背景：
2005-2008 华威大学功率半导体器件博士
1999-2003 斯旺西大学电子与通信学士
工作经历:
2022-至今 斯旺西大学电子与电气工程教授
2019-2022 斯旺西大学电子与电气工程副教授
2009-2017 华威大学副教授
研究方向:
功率半导体器件物理与设计
宽带隙材料和器件
功率半导体器件的电气特性
功率半导体器件的可靠性
代表性成果:
1. Pérez-Tomás, A., Chikoidze, E., Dumont, Y., Jennings, M., Russell, S., Vales-Castro, P., Catalan, G., Lira-Cantú, M., Ton –That, C., Teherani, F., Sandana, V., Bove, P., Rogers, D., & Jennings, M. (2019). Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes. Materials Today Energy, 14, 100350
https://doi.org/10.1016/j.mtener.2019.100350, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa52399
2. Arvanitopoulos, A., Antoniou, M., Perkins, S., Jennings, M., Belanche, M., Gyftakis, K., & Lophitis, N. (2019). On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes. IEEE Transactions on Industry Applications, 1-1.
https://doi.org/10.1109/TIA.2019.2911872, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49906
3. Via, F., Roccaforte, F., Magna, A., Nipoti, R., Mancarella, F., Wellman, P., Crippa, D., Mauceri, M., Ward, P., Miglio, L., , M., Schöner, A., Nejim, A., Vivani, L., Yakimova, R., Syväjärvi, M., Grosset, G., Torregrosa, F., Jennings, M...., & Jennings, M. (2018). 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE). Materials Science Forum, 924, 913-918.
https://doi.org/10.4028/www.scientific.net/MSF.924.913, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49905
4. Chikoidze, E., Fellous, A., Perez-Tomas, A., Sauthier, G., Tchelidze, T., Ton-That, C., Huynh, T., Phillips, M., Russell, S., Jennings, M., Berini, B., Jomard, F., & Dumont, Y. (2017). P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Materials Today Physics, 3, 118-126.
https://doi.org/10.1016/j.mtphys.2017.10.002, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49904
5. Russell, S., Perez-Tomas, A., McConville, C., Fisher, C., Hamilton, D., Mawby, P., Jennings, M., & Jennings, M. (2017). Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating. IEEE Journal of the Electron Devices Society, 5(4), 256-261.
https://doi.org/10.1109/JEDS.2017.2706321, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49903
6. Hamilton, D., Jennings, M., Perez-Tomas, A., Russell, S., Hindmarsh, S., Fisher, C., & Mawby, P. (2017). High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs. IEEE Transactions on Power Electronics, 32(10), 7967-7979.
https://doi.org/10.1109/TPEL.2016.2636743, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa49902
7. Li, F., Mawby, P., Song, Q., Perez-Tomas, A., Shah, V., Sharma, Y., Hamilton, D., Fisher, C., Gammon, P., & Jennings, M. (2020). A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability. IEEE Transactions on Electron Devices, 67(1), 237-242.
https://doi.org/10.1109/ted.2019.2954911, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53335
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